Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: SMD/SMT
• Package/Case: SOIC-8
• Transistor Polarity: N-Channel, P-Channel
• Number of Channels: 2 Channel
• Vds - Drain-Source Breakdown Voltage: 30 V
• Id - Continuous Drain Current: 5.8 A
• Rds On - Drain-Source Resistance: 75 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Qg - Gate Charge: 16.7 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 2.5 W
• Channel Mode: Enhancement
• Packaging: Tube
• Brand: Infineon / IR
• Configuration: Dual
• Fall Time: 7.7 ns, 18 ns
• Height: 1.75 mm
• Length: 4.9 mm
• Product Type: MOSFET
• Rise Time: 21 ns, 17 ns
• 95
• Subcategory: MOSFETs
• Transistor Type: 1 N-Channel, 1 P-Channel
• Type: Power MOSFET
• Typical Turn-Off Delay Time: 22 ns, 25 ns
• Typical Turn-On Delay Time: 6.8 ns, 11 ns
• Width: 3.9 mm
• Part # Aliases: SP001555260
• Unit Weight: 540 mg

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