Apraksts

• Manufacturer: TT Electronics
• Product Category: Bipolar Transistors - BJT
• Mounting Style: Through Hole
• Package/Case: TO-18-3
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 15 V
• Collector- Base Voltage VCBO: 40 V
• Emitter- Base Voltage VEBO: 4.5 V
• Collector-Emitter Saturation Voltage: 500 mV
• Maximum DC Collector Current: 500 mA
• Pd - Power Dissipation: 360 mW
• Gain Bandwidth Product fT: 500 MHz
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 200 C
• DC Current Gain hFE Max: 120 at 10 mA, 1 V
• Technology: Si
• Brand: Semelab / TT Electronics
• Continuous Collector Current: 200 mA
• DC Collector/Base Gain hFE Min: 40 at 10 mA, 1 V
• Product Type: BJTs - Bipolar Transistors
• Subcategory: Transistors

Parametri

TO-18
40V
0.2A
NPN

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