Apraksts

• Manufacturer: STMicroelectronics
• Product Category: Bipolar Transistors - BJT
• RoHS: Details
• Mounting Style: Through Hole
• Package/Case: SOT-32-3
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 80 V
• Collector- Base Voltage VCBO: 80 V
• Emitter- Base Voltage VEBO: 5 V
• Collector-Emitter Saturation Voltage: 0.6 V
• Maximum DC Collector Current: 2 A
• Pd - Power Dissipation: 25 W
• Gain Bandwidth Product fT: 3 MHz
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Series: BD237
• Packaging: Tube
• Height: 10.8 mm
• Length: 7.8 mm
• Technology: Si
• Width: 2.7 mm
• Brand: STMicroelectronics
• Continuous Collector Current: 2 A
• DC Collector/Base Gain hFE Min: 40
• Product Type: BJTs - Bipolar Transistors

Parametri

TO-126
100V
2A
NPN

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