Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: SMD/SMT
• Package/Case: SOT-23-3
• Transistor Polarity: P-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 60 V
• Id - Continuous Drain Current: 330 mA
• Rds On - Drain-Source Resistance: 1.4 Ohms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 2 V
• Qg - Gate Charge: 2.38 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 360 mW
• Channel Mode: Enhancement
• Qualification: AEC-Q101
• Packaging: Reel
• Packaging: Cut Tape
• Packaging: MouseReel
• Brand: Infineon Technologies
• Configuration: Single
• Fall Time: 61 ns
• Forward Transconductance - Min: 0.24 S
• Height: 1.1 mm
• Length: 2.9 mm
• Product Type: MOSFET
• Rise Time: 71 ns
• 3000
• Subcategory: MOSFETs
• Transistor Type: 1 P-Channel
• Typical Turn-Off Delay Time: 56 ns
• Typical Turn-On Delay Time: 23 ns
• Width: 1.3 mm
• Part # Aliases: BSS83P H6327 SP000702486
• Unit Weight: 8 mg

Parametri

-60V
-0.33A
0.36W
2R
SOT23

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