Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor P-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage -55V
• Drain current -74A
• Power dissipation 200W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 20mΩ
• Mounting THT
• Gate charge 120nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 1.98 g
• Manufacturer part number: IRF4905PBF

Parametri

-55V
-74A
200W
0R02
TO-220

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