Apraksts

• Manufacturer: Vishay
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: DIP-4
• Transistor Polarity: P-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 60 V
• Id - Continuous Drain Current: 1.1 A
• Rds On - Drain-Source Resistance: 500 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 4 V
• Qg - Gate Charge: 12 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Pd - Power Dissipation: 1.3 W
• Channel Mode: Enhancement
• Packaging: Tube
• Brand: Vishay / Siliconix
• Configuration: Single
• Height: 3.37 mm
• Length: 6.29 mm
• Product Type: MOSFET
• Series: IRFD
• 2500
• Subcategory: MOSFETs
• Width: 5 mm
• Unit Weight: 894,062 mg

Parametri

-60V
-1.1A
1.3W
0R5
DIP4

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