Apraksts

• Type Designator: 2SA1006
• Material of Transistor: Si
• Polarity: PNP
• Maximum Collector Power Dissipation (Pc): 25 W
• Maximum Collector-Base Voltage |Vcb|: 180 V
• Maximum Collector-Emitter Voltage |Vce|: 180 V
• Maximum Emitter-Base Voltage |Veb|: 5 V
• Maximum Collector Current |Ic max|: 1.5 A
• Max. Operating Junction Temperature (Tj): 150 °C
• Transition Frequency (ft): 80 MHz
• Collector Capacitance (Cc): 45 pF
• Forward Current Transfer Ratio (hFE), MIN: 120
• Noise Figure, dB: -
• Package: TO220

Parametri

25W
TO-220
-800V
-1.5A
PNP

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