Apraksts

• Type Designator: HAT1055R
• Type of Transistor: MOSFET
• Type of Control Channel: P -Channel
• Pd ⓘ - Maximum Power Dissipation: 2 W
• |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
• |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
• |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V
• |Id| ⓘ - Maximum Drain Current: 5 A
• Tj ⓘ - Maximum Junction Temperature: 150 °C
• Qg ⓘ - Total Gate Charge: 21 nC
• tr ⓘ - Rise Time: 15 nS
• Cossⓘ - Output Capacitance: 135 pF
• Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm

Parametri

-60V
5A
2W
0R06
SO8

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