SI4925DDY SMD Tranzistors 2*P-FET, Q1(LogL(-1...-3V), -30A, ±20V, -7.3A, 5W, 0R024), Q2(LogL(-1...-3V), -30A, ±20V, -7.3A, 5W, 0R024) => IRF7328, SO8
SI4925DDY SMD Tranzistors 2*P-FET, Q1(LogL(-1...-3V), -30A, ±20V, -7.3A, 5W, 0R024), Q2(LogL(-1...-3V), -30A, ±20V, -7.3A, 5W, 0R024) => IRF7328, SO8

* Produktu fotogrāfijas ir tikai noskatīšanai un var dažreiz atšķirties no priekšmeta reāla izskata. Bet galvenās īpašības ir vienādas.

SI4925DDY SMD Tranzistors 2*P-FET, Q1(LogL(-1...-3V), -30A, ±20V, -7.3A, 5W, 0R024), Q2(LogL(-1...-3V), -30A, ±20V, -7.3A, 5W, 0R024) => IRF7328, SO8

Cena: 0.96 €
00011939
SI4925DDY-T1-GE3
15
  • Apraksts

    • Manufacturer: Vishay
    • Product Category: MOSFET
    • RoHS: Details
    • Technology: Si
    • Mounting Style: SMD/SMT
    • Package/Case: SOIC-8
    • Transistor Polarity: P-Channel
    • Number of Channels: 2 Channel
    • Vds - Drain-Source Breakdown Voltage: 30 V
    • Id - Continuous Drain Current: 8 A
    • Rds On - Drain-Source Resistance: 29 mOhms
    • Vgs - Gate-Source Voltage: - 20 V, + 20 V
    • Vgs th - Gate-Source Threshold Voltage: 1 V
    • Qg - Gate Charge: 32 nC
    • Minimum Operating Temperature: - 55 C
    • Maximum Operating Temperature: + 150 C
    • Pd - Power Dissipation: 5 W
    • Channel Mode: Enhancement
    • Tradename: TrenchFET
    • Packaging: Reel
    • Packaging: Cut Tape
    • Packaging: MouseReel
    • Brand: Vishay Semiconductors
    • Configuration: Dual
    • Fall Time: 12 ns
    • Forward Transconductance - Min: 23 S
    • Height: 1.75 mm
    • Length: 4.9 mm
    • Product Type: MOSFET
    • Rise Time: 8 ns
    • Series: SI4

    Parametri

    -7.3A
    5W
    0R024
    SO8
    -30V

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