Apraksts

• Manufacturer: Vishay
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: SMD/SMT
• Package/Case: SOIC-8
• Transistor Polarity: P-Channel
• Number of Channels: 2 Channel
• Vds - Drain-Source Breakdown Voltage: 30 V
• Id - Continuous Drain Current: 8 A
• Rds On - Drain-Source Resistance: 29 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 1 V
• Qg - Gate Charge: 32 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 5 W
• Channel Mode: Enhancement
• Tradename: TrenchFET
• Packaging: Reel
• Packaging: Cut Tape
• Packaging: MouseReel
• Brand: Vishay Semiconductors
• Configuration: Dual
• Fall Time: 12 ns
• Forward Transconductance - Min: 23 S
• Height: 1.75 mm
• Length: 4.9 mm
• Product Type: MOSFET
• Rise Time: 8 ns
• Series: SI4

Parametri

-30A
-7.3A
5W
0R024
SO8

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