Apraksts

• Manufacturer: Toshiba
• Product Category: MOSFET
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-3PL-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 1 kV
• Id - Continuous Drain Current: 12 A
• Rds On - Drain-Source Resistance: 1 Ohms
• Vgs - Gate-Source Voltage: - 30 V, + 30 V
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 200 W
• Channel Mode: Enhancement
• Series: 2SK1489
• Packaging: Bulk
• Brand: Toshiba
• Configuration: Single
• Fall Time: 150 ns
• Height: 26 mm
• Length: 20 mm
• Product Type: MOSFET
• Rise Time: 100 ns
• Subcategory: MOSFETs
• Transistor Type: 1 N-Channel
• Width: 5 mm
• Unit Weight: 7 g

Parametri

1000V
12A
200W
1R
TO-3PL

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