Apraksts

• Manufacturer STMicroelectronics
• Type of transistor N-MOSFET
• Technology MESH OVERLAY™ II
• Polarisation unipolar
• Drain-source voltage 200V
• Drain current 5.7A
• Power dissipation 75W
• Case TO220-3
• Gate-source voltage ±20V
• On-state resistance 400mΩ
• Mounting THT
• Kind of package tube
• Kind of channel enhanced
• Features of semiconductor devices ESD protected gate
• Additional information
• Gross weight: 1.95 g
• Manufacturer part number: IRF630

Parametri

200V
9A
74W
0R35
TO-220

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