IRFB31N20D Tranzistors N-FET, 200V, Vgs(3...5.5V), ±30V, 31A, 200W, 0R082 => IRFB38N20D, TO-220AB
IRFB31N20D Tranzistors N-FET, 200V, Vgs(3...5.5V), ±30V, 31A, 200W, 0R082 => IRFB38N20D, TO-220AB

* Produktu fotogrāfijas ir tikai noskatīšanai un var dažreiz atšķirties no priekšmeta reāla izskata. Bet galvenās īpašības ir vienādas.

IRFB31N20D Tranzistors N-FET, 200V, Vgs(3...5.5V), ±30V, 31A, 200W, 0R082 => IRFB38N20D, TO-220AB

Cena: 4.69 €
00018576
IRFB31N20DPBF
20
  • Apraksts

    • Manufacturer Infineon (IRF)
    • Type of transistor N-MOSFET
    • Technology HEXFET®
    • Polarisation unipolar
    • Drain-source voltage 200V
    • Drain current 31A
    • Power dissipation 200W
    • Case TO220AB
    • Gate-source voltage ±30V
    • On-state resistance 82mΩ
    • Mounting THT
    • Gate charge 70nC
    • Kind of package tube
    • Kind of channel enhanced

    Parametri

    200V
    31A
    200W
    0R082
    TO-220AB

    Papildu dokumentācija

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