Apraksts

• Manufacturer: Vishay
• Product Category: MOSFET
• RoHS: Details
• REACH - SVHC:
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-220-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 500 V
• Id - Continuous Drain Current: 20 A
• Rds On - Drain-Source Resistance: 250 mOhms
• Vgs - Gate-Source Voltage: - 30 V, + 30 V
• Vgs th - Gate-Source Threshold Voltage: 3 V
• Qg - Gate Charge: 110 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 280 W
• Channel Mode: Enhancement
• Series: IRFB
• Packaging: Tube
• Brand: Vishay Semiconductors
• Configuration: Single
• Fall Time: 33 ns
• Forward Transconductance - Min: 11 S
• Height: 15.49 mm
• Length: 10.41 mm
• Product Type: MOSFET
• Rise Time: 74 ns

Parametri

500V
20A
TO-220
280W
0R21

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