Apraksts

• Manufacturer IXYS
• Type of transistor N-MOSFET
• Technology HiPerFET™
• Polarisation unipolar
• Drain-source voltage 500V
• Drain current 21A
• Power dissipation 300W
• Case TO247-3
• Gate-source voltage ±20V
• On-state resistance 250mΩ
• Mounting THT
• Gate charge 135nC
• Kind of package tube
• Kind of channel enhanced
• Reverse recovery time 250ns

Parametri

500V
21A
280W
0R25
TO-247

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