Apraksts

• Manufacturer VISHAY
• Type of transistor N-MOSFET
• Polarisation unipolar
• Drain-source voltage 500V
• Drain current 5.1A
• Pulsed drain current 32A
• Power dissipation 125W
• Case TO220AB
• Gate-source voltage ±30V
• On-state resistance 850mΩ
• Mounting THT
• Gate charge 38nC
• Kind of package tube
• Kind of channel enhanced
• Heatsink thickness 1.14...1.4mm
• Additional information
• Gross weight: 1.957 g
• Manufacturer part number: IRF840APBF

Parametri

500V
8A
0R85
125W
TO-220

Papildu dokumentācija