Apraksts

• Manufacturer IXYS
• Type of transistor N-MOSFET
• Technology HiPerFET™, PolarHV™
• Polarisation unipolar
• Drain-source voltage 500V
• Drain current 30A
• Power dissipation 460W
• Case TO247-3
• Gate-source voltage ±30V
• On-state resistance 200mΩ
• Mounting THT
• Gate charge 70nC
• Kind of package tube
• Kind of channel enhanced
• Reverse recovery time 200ns Additional information
• Gross weight: 6.23 g
• Manufacturer part number: IXFH30N50P

Parametri

500V
30A
460W
0R2
TO-247

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