Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-247-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 55 V
• Id - Continuous Drain Current: 53 A
• Rds On - Drain-Source Resistance: 20 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 2 V
• Qg - Gate Charge: 40.7 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Pd - Power Dissipation: 120 W
• Channel Mode: Enhancement
• Packaging: Tube
• Configuration: Single
• Height: 20.7 mm
• Length: 15.87 mm
• Transistor Type: 1 N-Channel
• Width: 5.31 mm
• Brand: Infineon / IR
• Product Type: MOSFET
• Factory Pack Quantity: 400
• Subcategory: MOSFETs
• Unit Weight: 6 g

Parametri

55V
53A
120W
0R02
TO-247

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