Apraksts

• Manufacturer TOSHIBA
• Type of transistor N-MOSFET
• Polarisation unipolar
• Drain-source voltage 650V
• Drain current 13.7A
• Power dissipation 40W
• Case TO220FP
• Gate-source voltage ±30V
• On-state resistance 250mΩ
• Mounting THT
• Gate charge 35nC
• Kind of package tube
• Kind of channel enhanced Papildu informācijas
• Masa bruto: 1.623 g
• Oriģināls simbols: TK14A65W,S5X(M

Parametri

650V
13.7A
40W
0R22
TO-220F

Papildu dokumentācija