Apraksts

• Manufacturer STMicroelectronics
• Type of transistor N-MOSFET
• Technology SuperMesh™
• Polarisation unipolar
• Drain-source voltage 800V
• Drain current 1.57A
• Power dissipation 70W
• Case TO220-3
• Gate-source voltage ±30V
• On-state resistance 4500mΩ
• Mounting THT
• Kind of package tube
• Kind of channel enhanced
• Features of semiconductor devices ESD protected gate
• Papildu informācijas
• Masa bruto: 1.957 g
• Oriģināls simbols: STP3NK80Z

Parametri

650V
8.7A
31.25W
0R42
TO-220FP

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