Apraksts

• Manufacturer: Toshiba
• Product Category: MOSFET
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-220-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 800 V
• Id - Continuous Drain Current: 5 A
• Rds On - Drain-Source Resistance: 2.2 Ohms
• Vgs - Gate-Source Voltage: - 30 V, + 30 V
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 45 W
• Channel Mode: Enhancement
• Packaging: Reel
• Configuration: Single
• Height: 15.1 mm
• Length: 10.16 mm
• Series: 2SK2605
• Transistor Type: 1 N-Channel
• Width: 4.45 mm
• Brand: Toshiba
• Fall Time: 40 ns
• Product Type: MOSFET
• Rise Time: 40 ns
• Factory Pack Quantity: 50
• Subcategory: MOSFETs
• Typical Turn-Off Delay Time: 280 ns
• Typical Turn-On Delay Time: 40 ns
• Unit Weight: 2 g

Parametri

800V
5A
45W
2R2
TO-220F

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