Apraksts

• Manufacturer STMicroelectronics
• Type of transistor N-MOSFET
• Technology SuperMesh™
• Polarisation unipolar
• Drain-source voltage 900V
• Drain current 1.89A
• Power dissipation 25W
• Case TO220FP
• Gate-source voltage ±30V
• On-state resistance 4800mΩ
• Mounting THT
• Kind of package tube
• Kind of channel enhanced
• Features of semiconductor devices ESD protected gate
• Additional information
• Gross weight: 1.688 g
• Manufacturer part number: STP3NK90ZFP

Parametri

900V
3A
25W
4R8
TO-220F

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