Apraksts

• Manufacturer: ON Semiconductor
• Product Category: IGBT Transistors
• RoHS: Details
• Technology: Si
• Package/Case: TO-263AB-3
• Mounting Style: SMD/SMT
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 600 V
• Collector-Emitter Saturation Voltage: 1.8 V
• Maximum Gate Emitter Voltage: 20 V
• Pd - Power Dissipation: 290 W
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 70 A

Parametri

290W
TO-263
SMD
40A
600V
Viens IGBT

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