Apraksts

• Manufacturer ONSEMI
• Type of transistor IGBT
• Collector-emitter voltage 1,2kV
• Collector current 5A
• Power dissipation 28W
• Case DPAK
• Gate-emitter voltage ±25V
• Pulsed collector current 12,5A
• Mounting SMD
• Gate charge 6,7nC
• Kind of package reel, tape
• Features of semiconductor devices logic level
• Application ignition systems
• Version ESD
• Masa bruto0.388 g

Parametri

69W
TO-252
SMD
5A
1200V
Viens IGBT

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