Apraksts

• Manufacturer ONSEMI
• Type of transistor IGBT
• Collector-emitter voltage 600V
• Collector current 40A
• Power dissipation 174W
• Case TO247-3
• Gate-emitter voltage ±20V
• Pulsed collector current 120A
• Mounting THT
• Gate charge 180nC
• Kind of package tube
• Features of semiconductor devices integrated anti-parallel diode
• Masa bruto4.952 g

Parametri

349W
TO-247
THT
40A
600V
IGBT+d

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