Apraksts

• Manufacturer STARPOWER SEMICONDUCTOR
• Type of transistor IGBT
• Collector-emitter voltage 1,2kV
• Collector current 75A
• Power dissipation 852W
• Case TO247PLUS
• Gate-emitter voltage ±20V
• Pulsed collector current 225A
• Mounting THT
• Gate charge 0,49µC
• Kind of package tube
• Turn-on time 163ns
• Turn-off time 559ns
• Features of semiconductor devices integrated anti-parallel diode
• Masa bruto6.89 g

Parametri

SUPER-247
THT
1200V
IGBT+d
852W
75A

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