Apraksts

• Manufacturer: Infineon
• Product Category: IGBT Transistors
• RoHS: Details
• Technology: Si
• Package/Case: TO-220-3
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 430 V
• Collector-Emitter Saturation Voltage: 1.4 V
• Maximum Gate Emitter Voltage: 10 V
• Continuous Collector Current at 25 C: 20 A
• Pd - Power Dissipation: 125 W
• Minimum Operating Temperature: - 40 C
• Maximum Operating Temperature: + 150 C
• Packaging: Tube
• Brand: Infineon / IR
• Continuous Collector Current Ic Max: 20 A
• Height: 8.77 mm
• Length: 10.54 mm
• Product Type: IGBT Transistors

Parametri

125W
TO-220
THT
14A
400V
IGBT+R+ZD

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