Apraksts

• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 20 V
• Current - Continuous Drain (Id) @ 25°C 6.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
• Rds On (Max) @ Id, Vgs 36mOhm @ 6.6A, 4.5V
• Vgs(th) (Max) @ Id 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 4.1 nC @ 4.5 V
• Vgs (Max) ±12V
• Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) 2W (Ta)
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package SOT-23-6

Parametri

20V
6.6A
2W
0R029
SOT23-6

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