Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: SMD/SMT
• Package/Case: SOT-223-4
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 600 V
• Id - Continuous Drain Current: 120 mA
• Rds On - Drain-Source Resistance: 25 Ohms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 1.9 V
• Qg - Gate Charge: 4.4 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 1.8 W
• Channel Mode: Enhancement
• Series: BSP125
• Packaging: Reel
• Packaging: Cut Tape
• Packaging: MouseReel
• Brand: Infineon Technologies
• Configuration: Single
• Fall Time: 110 ns
• Forward Transconductance - Min: 60 mS
• Height: 1.6 mm
• Length: 6.5 mm
• Product Type: MOSFET
• Rise Time: 14.4 ns
• 1000
• Subcategory: MOSFETs
• Transistor Type: 1 N-Channel
• Typical Turn-Off Delay Time: 20 ns
• Typical Turn-On Delay Time: 7.7 ns
• Width: 3.5 mm
• Part # Aliases: BSP125 H6327 SP001058576
• Unit Weight: 112 mg

Parametri

600V
0.12A
1.8W
26R
SOT223

Papildu dokumentācija