Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: SMD/SMT
• Package/Case: SOT-223-4
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 60 V
• Id - Continuous Drain Current: 1.8 A
• Rds On - Drain-Source Resistance: 220 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 800 mV
• Qg - Gate Charge: 14 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 1.8 W
• Channel Mode: Enhancement
• Series: BSP295
• Packaging: Reel
• Packaging: Cut Tape
• Packaging: MouseReel
• Brand: Infineon Technologies
• Configuration: Single
• Fall Time: 19 ns
• Forward Transconductance - Min: 0.8 S
• Height: 1.6 mm
• Length: 6.5 mm
• Product Type: MOSFET
• Rise Time: 9.9 ns
• 1000
• Subcategory: MOSFETs
• Transistor Type: 1 N-Channel
• Typical Turn-Off Delay Time: 27 ns
• Typical Turn-On Delay Time: 5.4 ns
• Width: 3.5 mm
• Part # Aliases: SP001058618 BSP295H6327XTSA1
• Unit Weight: 112 mg

Parametri

60V
1.8A
1.8W
0R3
SOT223

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