Apraksts

• Manufacturer TEXAS INSTRUMENTS
• Type of transistor N-MOSFET
• Technology NexFET™
• Polarisation unipolar
• Drain-source voltage 60V
• Drain current 200A
• Pulsed drain current 400A
• Power dissipation 250W
• Case D2PAK
• Gate-source voltage ±20V
• On-state resistance 3.3mΩ
• Mounting SMD
• Gate charge 44nC
• Kind of package reel,  tape
• Kind of channel enhanced
• Additional information
• Gross weight: 1.7 g
• Manufacturer part number: CSD18542KTTT

Parametri

60V
120A
250W
0R004
TO-263

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