Apraksts

• Category Discrete Semiconductor Products
• Transistors - FETs, MOSFETs - Single
• Mfr Infineon Technologies
• Series HEXFET®
• Package Tube
• Part Status Obsolete
• FET Type P-Channel
• Technology MOSFET (Metal Oxide)
• Current - Continuous Drain (Id) @ 25°C 11A (Ta)
• Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
• Rds On (Max) @ Id, Vgs 12mOhm @ 11A, 4.5V
• Vgs(th) (Max) @ Id 600mV @ 250µA
• Vgs (Max) ±12V
• FET Feature -
• Power Dissipation (Max) 2.5W (Ta)
• Operating Temperature -55°C ~ 150°C (TJ)
• Mounting Type Surface Mount
• Supplier Device Package 8-SO
• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Drain to Source Voltage (Vdss) 14 V
• Gate Charge (Qg) (Max) @ Vgs 125 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds 8075 pF @ 10 V

Parametri

-14V
-11A
2.5W
0R012
SO8

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