Apraksts

• Manufacturer: STMicroelectronics
• Product Category: Bipolar Transistors - BJT
• RoHS: Details
• Mounting Style: Through Hole
• Package/Case: TO-247-3
• Transistor Polarity: PNP
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 100 V
• Collector- Base Voltage VCBO: 140 V
• Emitter- Base Voltage VEBO: - 7 V
• Maximum DC Collector Current: 10 A
• Pd - Power Dissipation: 80 W
• Gain Bandwidth Product fT: 3 MHz
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Series: TIP34C
• Packaging: Tube
• DC Current Gain hFE Max: 100
• Height: 20.15 mm
• Length: 15.75 mm
• Technology: Si
• Width: 5.15 mm
• Brand: STMicroelectronics
• DC Collector/Base Gain hFE Min: 20
• Product Type: BJTs - Bipolar Transistors
• Factory Pack Quantity: 30
• Subcategory: Transistors
• Unit Weight: 6,500 g

Parametri

80W
TO-218
-100V
-10A
PNP

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