Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-220-3
• Transistor Polarity: P-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 55 V
• Id - Continuous Drain Current: 31 A
• Rds On - Drain-Source Resistance: 60 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 4 V
• Qg - Gate Charge: 42 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Pd - Power Dissipation: 110 W
• Channel Mode: Enhancement
• Packaging: Tube
• Brand: Infineon / IR
• Configuration: Single
• Fall Time: 63 ns
• Forward Transconductance - Min: 8 S
• Height: 15.65 mm
• Length: 10 mm
• Product Type: MOSFET
• Rise Time: 66 ns
• 2000
• Subcategory: MOSFETs
• Transistor Type: 1 P-Channel
• Typical Turn-Off Delay Time: 39 ns
• Typical Turn-On Delay Time: 14 ns
• Width: 4.4 mm
• Part # Aliases: IRF5305PBF SP001564354
• Unit Weight: 2 g

Parametri

-55V
-31A
110W
0R06
TO-220

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